Alexandra Abbadie

Reduced pressure–chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-μm photodetection

Jean‐Michel Hartmann, Alexandra Abbadie, Anne‐Marie Papon et al. · Journal of Applied Physics · 2004 · 220 citations

Optical Materials, Engineering, Ge-based Photodetectors +19

Engineering strained silicon on insulator wafers with the Smart CutTM technology

B. Ghyselen, Jean‐Michel Hartmann, T. Ernst et al. · Solid-State Electronics · 2004 · 114 citations

Insulator Wafers, Semiconductor Technology, Electrical Engineering +8

Critical thickness for plastic relaxation of SiGe on Si(001) revisited

Jean‐Michel Hartmann, Alexandra Abbadie, S. Favier · Journal of Applied Physics · 2011 · 104 citations

Engineering, Silicon On Insulator, Silicene +20

Epitaxial growth of Ge thick layers on nominal and 6° off Si(0 0 1); Ge surface passivation by Si

Jean‐Michel Hartmann, Alexandra Abbadie, N. Cherkashin et al. · Semiconductor Science and Technology · 2009 · 90 citations

Impact of the H2 anneal on the structural and optical properties of thin and thick Ge layers on Si; Low temperature surface passivation of Ge by Si

Jean‐Michel Hartmann, Alexandra Abbadie, Jean‐Paul Barnes et al. · Journal of Crystal Growth · 2009 · 49 citations

Materials Science, Epitaxial Growth, H2 Anneal +11