N. Cherkashin - Concepedia

Author

N. Cherkashin

Centre National de la Recherche Scientifique ORCID

Also Known As

C.-L. Cheng, Cherkashin, N. A., Cherkashin, Nikolay, Darras, François-Xavier, N A Cherkashin, N Cherkashin, N. A. Cherkashin, N. CHERKASHIN, N. Cherkashin, N. N. Cherkashin

224

Publications

2.8K

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Centre d’Élaboration de Matériaux et d’Études Structurales Université Fédérale de Toulouse Midi-Pyrénées CEA Grenoble Commissariat à l'Énergie Atomique et aux Énergies Alternatives

About

N. Cherkashin is an author at Centre National de la Recherche Scientifique specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	28	57	1.9K
2	Applied Physics	27	54	1.8K
3	Natural Sciences	3	3	77
4	Social Sciences	1	1	12
5	Chemical Engineering	1	1	42

N. Cherkashin

Publications

2.5K

Citations

H-Index

Page 1

	Year	Citations
Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy A. Kanjilal, J. Lundsgaard Hansen, A. Nylandsted Larsen, Applied Physics Letters Embedded Germanium NanocrystalsEngineeringGe NanodotsOptoelectronic DevicesSemiconductor Nanostructures	2003	115
Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO2 layers by low energy ion implantation Caroline Bonafos, M. Carrada, N. Cherkashin, Journal of Applied Physics EngineeringTwo-dimensional ArraysSi NanocrystalsIntegrated CircuitsSilicon On Insulator	2004	115
Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis P. Normand, E. Kapetanakis, Panagiotis Dimitrakis, Applied Physics Letters Non-volatile MemoryEngineeringThin OxidesEmerging Memory TechnologyIntegrated Circuits	2003	102
Epitaxial growth of Ge thick layers on nominal and 6° off Si(0 0 1); Ge surface passivation by Si Jean‐Michel Hartmann, Alexandra Abbadie, N. Cherkashin, Semiconductor Science and Technology	2009	90
Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS C. Bonafos, H. Coffin, N. Cherkashin, Ultramicroscopy Nanoscale ScienceEngineeringNanomaterialsNanotechnologySi Nanoparticles	2007	73
Clusters formation in ultralow-energy high-dose boron-implanted silicon F. Cristiano, X. Hebras, N. Cherkashin, Applied Physics Letters Materials ScienceSemiconductorsIon ImplantationCluster ScienceSmall Cluster Defects	2003	66
Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001) S. Personnic, K.K. Bourdelle, F. Letertre, Journal of Applied Physics EngineeringTransient FormationH2 Formation KineticsSilicon On InsulatorFull Layer Transfer	2008	61
Amorphization, recrystallization and end of range defects in germanium A. Claverie, S. Koffel, N. Cherkashin, Thin Solid Films Materials EngineeringMaterials ScienceEngineeringCondensed Matter PhysicsDefect Formation	2009	54
1.3 µm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition N. N. Ledentsov, M. V. Maximov, D. Bimberg, Semiconductor Science and Technology	2000	54
Reversibility of the island shape, volume and density in Stranski-Krastanow growth N. N. Ledentsov, V. A. Shchukin, D. Bimberg, Semiconductor Science and Technology	2001	54

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