J. Lundsgaard Hansen

Boron and phosphorus diffusion in strained and relaxed Si and SiGe

Nikolaj Zangenberg, Jacob Fage-Pedersen, J. Lundsgaard Hansen et al. · Journal of Applied Physics · 2003 · 126 citations

Natural Sciences, Materials Engineering, Materials Science +16

Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy

A. Kanjilal, J. Lundsgaard Hansen, A. Nylandsted Larsen et al. · Applied Physics Letters · 2003 · 115 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Piezoresistance of silicon and strained Si0.9Ge0.1

J. Richter, Ole Hansen, A. Nylandsted Larsen et al. · Sensors and Actuators A Physical · 2005 · 59 citations

Engineering, Materials Engineering, Materials Science +9

Strain-relaxed SiGe/Si heteroepitaxial structures of low threading-dislocation density

A. Nylandsted Larsen, J. Lundsgaard Hansen · Thin Solid Films · 2000 · 45 citations

Engineering, Materials Engineering, Materials Science +13

Pseudomorphic Si1−<i>x</i>Sn<i>x</i> alloy films grown by molecular beam epitaxy on Si

S. Yu. Shiryaev, J. Lundsgaard Hansen, P. Kringho j et al. · Applied Physics Letters · 1995 · 42 citations

Natural Sciences, Materials Engineering, Materials Science +17