P. Kringho j - Concepedia

Author

P. Kringho j

Aarhus University

Also Known As

P. Kringho j, P. Kringho/j, Per Kringho/j

Publications

597

Citations

H-Index

Concepts

All Affiliations

Aarhus University Australian National University Institute for Microelectronics and Microsystems

About

P. Kringho j is an author at Aarhus University specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	15	514
2	Applied Physics	13	15	514
3	Electrical Engineering	7	7	252
4	Materials Engineering	5	5	185
5	Chemistry	1	1	37

P. Kringho j

Publications

546

Citations

H-Index

Page 1

	Year	Citations
Evolution from point to extended defects in ion implanted silicon J. L. Benton, Sebania Libertino, P. Kringho j, Journal of Applied Physics Electrical EngineeringIon ImplantationPoint DefectsEngineeringPhysics	1997	141
Diffusion of Sb in relaxed Si1−<i>x</i>Ge<i>x</i> A. Nylandsted Larsen, P. Kringho j Applied Physics Letters EngineeringGermanium ContentSilicon On InsulatorTransport PhenomenaAnomalous Diffusion	1996	66
Using doping superlattices to study transient-enhanced diffusion of boron in regrown silicon K. S. Jones, R. G. Elliman, M. Petravić, Applied Physics Letters Point DefectsEngineeringCubic Boron NitrideIntegrated CircuitsSilicon On Insulator	1996	41
Pseudomorphic Si1−<i>x</i>Sn<i>x</i> alloy films grown by molecular beam epitaxy on Si S. Yu. Shiryaev, J. Lundsgaard Hansen, P. Kringho j, Applied Physics Letters Materials EngineeringMaterials ScienceSemiconductorsEpitaxial GrowthEngineering	1995	40
Evolution of interstitial- and vacancy-type defects upon thermal annealing in ion-implanted Si Sebania Libertino, J. L. Benton, D. C. Jacobson, Applied Physics Letters SemiconductorsElectrical EngineeringIon ImplantationPoint DefectsMev Si Implants	1997	37
Diffusion of ion implanted Sn in Si, Si1−<i>x</i>Ge<i>x</i>, and Ge P. Kringho j, R. G. Elliman Applied Physics Letters Materials ScienceHigh Temperature AnnealingIon ImplantationEngineeringDiffusion Resistance	1994	37
Electronic defect levels in relaxed, epitaxial<i>p</i>-type Si1−xGex layers produced by MeV proton irradiation E. V. Monakhov, A. Nylandsted Larsen, P. Kringho j Journal of Applied Physics	1997	32
{111} defects in 1-MeV-silicon-ion-implanted silicon Chih‐Lung Chou, D. J. H. Cockayne, Jin Zou, Physical review. B, Condensed matter SemiconductorsMaterials Science1-Mev-silicon-ion-implanted SiliconIon ImplantationEngineering	1995	24
Substitutional gold in Si1−<i>x</i>Ge<i>x</i> F. Nikolajsen, P. Kringho j, A. Nylandsted Larsen Applied Physics Letters Materials ScienceMaterials EngineeringRelaxed Si1−xgexIi-vi SemiconductorSubstitutional Gold	1996	19
Rapid thermal annealing of Ge-implanted InP P. Kringho j, V. V. Gribkovskii, A. Nylandsted Larsen Applied Physics Letters Materials ScienceMaterials EngineeringIon ImplantationSemiconductor TechnologyEngineering	1990	19

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