P. Kringho j

Evolution from point to extended defects in ion implanted silicon

J. L. Benton, Sebania Libertino, P. Kringho j et al. · Journal of Applied Physics · 1997 · 141 citations

Electrical Engineering, Ion Implantation, Point Defects +9

Diffusion of Sb in relaxed Si1−<i>x</i>Ge<i>x</i>

A. Nylandsted Larsen, P. Kringho j · Applied Physics Letters · 1996 · 66 citations

Engineering, Germanium Content, Silicon On Insulator +16

Using doping superlattices to study transient-enhanced diffusion of boron in regrown silicon

K. S. Jones, R. G. Elliman, M. Petravić et al. · Applied Physics Letters · 1996 · 41 citations

Point Defects, Engineering, Cubic Boron Nitride +21

Pseudomorphic Si1−<i>x</i>Sn<i>x</i> alloy films grown by molecular beam epitaxy on Si

S. Yu. Shiryaev, J. Lundsgaard Hansen, P. Kringho j et al. · Applied Physics Letters · 1995 · 40 citations

Materials Engineering, Materials Science, Semiconductors +14

Evolution of interstitial- and vacancy-type defects upon thermal annealing in ion-implanted Si

Sebania Libertino, J. L. Benton, D. C. Jacobson et al. · Applied Physics Letters · 1997 · 37 citations

Semiconductors, Electrical Engineering, Ion Implantation +15