Epitaxial growth of Ge thick layers on nominal and 6° off Si(0 0 1); Ge surface passivation by Si - Concepedia

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Epitaxial growth of Ge thick layers on nominal and 6° off Si(0 0 1); Ge surface passivation by Si

90

Citations

35

References

2009

Year

Jean‐Michel Hartmann, Alexandra Abbadie, N. Cherkashin, H. Grampeix, L. Clavelier

Semiconductor Science and Technology

Abstract

International audience

References

	Year	Citations

Page 1