L. Clavelier

Advances, challenges and opportunities in 3D CMOS sequential integration

P. Batude, M. Vinet, B. Prévitali et al. · 2011 · 148 citations · Full text

Materials Science, 3D Ic Architecture, Wafer Scale Processing +15

Germanium-on-insulator (GeOI) substrates—A novel engineered substrate for future high performance devices

T. Akatsu, C. Deguet, Loïc Sanchez et al. · Materials Science in Semiconductor Processing · 2006 · 128 citations

Electronic Devices, Engineering, Electronic Engineering +5

Epitaxial growth of Ge thick layers on nominal and 6° off Si(0 0 1); Ge surface passivation by Si

Jean‐Michel Hartmann, Alexandra Abbadie, N. Cherkashin et al. · Semiconductor Science and Technology · 2009 · 90 citations

Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator

Dimitrios Kazazis, Pooya Jannaty, A. Zaslavsky et al. · Applied Physics Letters · 2009 · 84 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +10

An Overview of Patterned Metal/Dielectric Surface Bonding: Mechanism, Alignment and Characterization

L. Di Cioccio, Pierric Gueguen, R. Taïbi et al. · Journal of The Electrochemical Society · 2011 · 84 citations

Engineering, Interconnect (Integrated Circuits), Wafer Scale Processing +18