L. Clavelier - Concepedia

Author

L. Clavelier

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Also Known As

Clavelier, L., L Clavelier, L. Clavelier, Laurent CLAVELIER, Laurent Clavelier

143

Publications

2.4K

Citations

H-Index

Concepts

All Affiliations

Commissariat à l'Énergie Atomique et aux Énergies Alternatives CEA Grenoble Laboratoire d'Électronique des Technologies de l'Information Institut polytechnique de Grenoble Université Grenoble Alpes

About

L. Clavelier is an author at Commissariat à l'Énergie Atomique et aux Énergies Alternatives specializing in engineering, applied physics, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	28	59	2K
2	Applied Physics	28	54	1.9K
3	Computer Engineering	7	7	359
4	Natural Sciences	1	1	19
5	Chemical Engineering	1	1	14

L. Clavelier

Publications

2.2K

Citations

H-Index

Page 1

	Year	Citations
Advances, challenges and opportunities in 3D CMOS sequential integration P. Batude, M. Vinet, B. Prévitali, Materials Science3D Ic ArchitectureWafer Scale ProcessingEngineeringVlsi Design	2011	148
Germanium-on-insulator (GeOI) substrates—A novel engineered substrate for future high performance devices T. Akatsu, C. Deguet, Loïc Sanchez, Materials Science in Semiconductor Processing Electronic DevicesEngineeringElectronic EngineeringSurface ScienceApplied Physics	2006	128
Epitaxial growth of Ge thick layers on nominal and 6° off Si(0 0 1); Ge surface passivation by Si Jean‐Michel Hartmann, Alexandra Abbadie, N. Cherkashin, Semiconductor Science and Technology	2009	90
Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator Dimitrios Kazazis, Pooya Jannaty, A. Zaslavsky, Applied Physics Letters Semiconductor TechnologyElectrical EngineeringElectronic DevicesLow TemperaturesEngineering	2009	84
An Overview of Patterned Metal/Dielectric Surface Bonding: Mechanism, Alignment and Characterization L. Di Cioccio, Pierric Gueguen, R. Taïbi, Journal of The Electrochemical Society EngineeringInterconnect (Integrated Circuits)Wafer Scale ProcessingAdvanced Packaging (Semiconductors)Electronic Packaging	2011	84
Copper Direct-Bonding Characterization and Its Interests for 3D Integration Pierric Gueguen, L. Di Cioccio, Patrice Gergaud, Journal of The Electrochemical Society EngineeringCopper OxideInterconnect (Integrated Circuits)Wafer Scale ProcessingCopper Direct-bonding Characterization	2009	67
Selective epitaxial growth of boron- and phosphorus-doped Si and SiGe for raised sources and drains Jean‐Michel Hartmann, L. Clavelier, C. Jahan, Journal of Crystal Growth Electrical EngineeringEpitaxial GrowthSelective Epitaxial GrowthEngineeringApplied Physics	2004	65
3D monolithic integration: Technological challenges and electrical results M. Vinet, P. Batude, C. Tabone, Microelectronic Engineering 3D Ic ArchitectureEngineeringAdvanced Packaging (Semiconductors)Device IntegrationTechnological Challenges	2010	65
High quality Germanium-On-Insulator wafers with excellent hole mobility Quang Trung Nguyen, J.F. Damlencourt, Benjamin Vincent, Solid-State Electronics Semiconductor TechnologyElectrical EngineeringEngineeringApplied PhysicsSemiconductor Device Fabrication	2007	63
Static and Dynamic TCAD Analysis of IMOS Performance: From the Single Device to the Circuit F. Mayer, C. Le Royer, G. Le Carval, IEEE Transactions on Electron Devices Dynamic Tcad AnalysisEngineeringImos PerformanceComputer ArchitectureIntegrated Circuits	2006	53

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