Engineering strained silicon on insulator wafers with the Smart CutTM technology

Quantitative measurement of displacement and strain fields from HREM micrographs

Martin Hÿtch, E. Snoeck, R. Kilaas · Ultramicroscopy · 1998 · 2.7K citations

Engineering, Biophysics, Materials Engineering +14

Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

Massimo V. Fischetti, S.E. Laux · Journal of Applied Physics · 1996 · 1.5K citations

Natural Sciences, Materials Science, Physics +17

Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness

Massimo V. Fischetti, Zhibin Ren, P. M. Solomon et al. · Journal of Applied Physics · 2003 · 481 citations

Engineering, Materials Engineering, Materials Science +17

Fabrication and analysis of deep submicron strained-Si n-MOSFET's

K. Rim, Judy L. Hoyt, J. F. Gibbons · IEEE Transactions on Electron Devices · 2000 · 361 citations

Engineering, Electrical Engineering, Materials Engineering +17

Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction

Tetsuo Tezuka, Naoharu Sugiyama, Shinichi Takagi · Applied Physics Letters · 2001 · 290 citations

Engineering, Materials Engineering, Materials Science +17