J. F. Gibbons - Concepedia

Author

J. F. Gibbons

Also Known As

, J Gibbons, J. F. GIBBONS, J. F. Gibbons, J. F.. Gibbons, J. Gibbons, J.F Gibbons, J.F. GIBBONS, J.F. Gibbons, James F. Gibbons

400

Publications

12.6K

Citations

H-Index

201

Concepts

All Affiliations

Stanford University Hewlett-Packard (United States)University College Dublin

About

J. F. Gibbons is an author at Stanford University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	52	162	10.5K
2	Medicine	11	11	209
3	Natural Sciences	10	10	617
4	Education	5	5	307
5	Health Sciences	5	5	110

J. F. Gibbons

193

Publications

11.9K

Citations

H-Index

Page 1

	Year	Citations
Ion implantation in semiconductors—Part II: Damage production and annealing J. F. Gibbons Proceedings of the IEEE EngineeringRadiation EffectAnnealing CharacteristicsSemiconductorsIon Implantation	1972	735
Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method Yiming Li, David J. Mann, Marco Rolandi, Nano Letters EngineeringCarbon NanotechnologySingle-walled Carbon NanotubesPlasma ProcessingChemical Engineering	2004	532
Switching properties of thin Nio films J. F. Gibbons, W.E. Beadle Solid-State Electronics Materials ScienceEngineeringOxide ElectronicsApplied PhysicsThin Films	1964	494
Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field-effect transistors Shinichi Takagi, Judy L. Hoyt, J.J. Welser, Journal of Applied Physics EngineeringSemiconductor MaterialsSemiconductor DeviceSemiconductor NanostructuresSemiconductors	1996	468
Ultra-high-yield growth of vertical single-walled carbon nanotubes: Hidden roles of hydrogen and oxygen Guangyu Zhang, David J. Mann, Li Zhang, Proceedings of the National Academy of Sciences	2005	430
Fabrication and analysis of deep submicron strained-Si n-MOSFET's K. Rim, Judy L. Hoyt, J. F. Gibbons IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsNanoelectronics	2000	361
Temperature distributions produced in semiconductors by a scanning elliptical or circular cw laser beam Y. I. Nissim, A. Lietoila, R. B. Gold, Journal of Applied Physics Electrical EngineeringEngineeringPhysicsSemiconductor LasersOptical Properties	1980	273
Stoichiometric disturbances in ion implanted compound semiconductors L. A. Christel, J. F. Gibbons Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringMaterials EngineeringEngineering	1981	248
Ion implantation in semiconductors—Part I: Range distribution theory and experiments J. F. Gibbons Proceedings of the IEEE SemiconductorsMaterials ScienceElectrical EngineeringIon ImplantationEngineering	1968	242
cw laser anneal of polycrystalline silicon: Crystalline structure, electrical properties A. Gat, L. Gerzberg, J. F. Gibbons, Applied Physics Letters EngineeringAverage Grain SizeLaser ApplicationsLaser MaterialOptoelectronic Devices	1978	228

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