J. F. Gibbons

Ion implantation in semiconductors—Part II: Damage production and annealing

J. F. Gibbons · Proceedings of the IEEE · 1972 · 735 citations

Engineering, Radiation Effect, Annealing Characteristics +16

Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method

Yiming Li, David J. Mann, Marco Rolandi et al. · Nano Letters · 2004 · 532 citations

Engineering, Carbon Nanotechnology, Single-walled Carbon Nanotubes +18

Switching properties of thin Nio films

J. F. Gibbons, W.E. Beadle · Solid-State Electronics · 1964 · 494 citations

Materials Science, Engineering, Oxide Electronics +4

Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field-effect transistors

Shinichi Takagi, Judy L. Hoyt, J.J. Welser et al. · Journal of Applied Physics · 1996 · 468 citations

Engineering, Semiconductor Materials, Semiconductor Device +19

Ultra-high-yield growth of vertical single-walled carbon nanotubes: Hidden roles of hydrogen and oxygen

Guangyu Zhang, David J. Mann, Li Zhang et al. · Proceedings of the National Academy of Sciences · 2005 · 430 citations · Full text