J.J. Welser - Concepedia

Author

J.J. Welser

IBM Research - Thomas J. Watson Research Center

Also Known As

J. J. WELSER, J. J. Welser, J. Welser, J.J. Welser, Jeffrey J. Welser, Jeffrey Welser

Publications

2.9K

Citations

H-Index

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center IBM (United States)Stanford University IBM Research - Almaden Toshiba (Japan)

About

J.J. Welser is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	28	2.2K
2	Business	3	3	356
3	Management	1	1	53
4	Natural Sciences	1	1	43
5	Social Sciences	1	1	228

J.J. Welser

Publications

2.4K

Citations

H-Index

Page 1

	Year	Citations
Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field-effect transistors Shinichi Takagi, Judy L. Hoyt, J.J. Welser, Journal of Applied Physics EngineeringSemiconductor MaterialsSemiconductor DeviceSemiconductor NanostructuresSemiconductors	1996	468
Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors J.J. Welser IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1994	362
Digital Innovation and Strategic Transformation Haluk Demirkan, J.J. Welser IT Professional Smart EquipmentDigital BusinessTechnology ChangeDigital InnovationSocial Sciences	2016	228
Room temperature operation of a quantum-dot flash memory J.J. Welser, S. Tiwari, S. A. Rishton, IEEE Electron Device Letters Non-volatile MemoryEngineeringFlash-memory DeviceIntegrated CircuitsElectronic Devices	1997	195
Electric-field penetration into metals: consequences for high-dielectric-constant capacitors Charles T. Black, J.J. Welser IEEE Transactions on Electron Devices DielectricsEngineeringElectromagnetic CompatibilityNanoelectronicsElectronic Packaging	1999	167
Strain dependence of the performance enhancement in strained-Si n-MOSFETs J.J. Welser, Judy L. Hoyt, Shinichi Takagi, SemiconductorsSemiconductor TechnologyElectrical EngineeringStrain DependenceEngineering	2002	158
Enhanced hole mobilities in surface-channel strained-Si p-MOSFETs K. Rim, J.J. Welser, Judy L. Hoyt, Materials EngineeringElectrical EngineeringStrain DependenceEngineeringPhysics	2002	97
Emerging Digital Frontiers for Service Innovation Christoph Peters, Paul P. Maglio, Ralph Badinelli, Communications of the Association for Information Systems Digital BusinessService DesignService InnovationSmart Service SystemsDigital Marketing	2016	81
Small silicon memories: confinement, single-electron,. and interface state considerations S. Tiwari, Jeremy Wahl, Helena Silva, Applied Physics A EngineeringElectronic MemoryApplied PhysicsMemory DeviceSemiconductor Memory	2000	59
The quest for the next information processing technology J.J. Welser, George I. Bourianoff, V.V. Zhirnov, Journal of Nanoparticle Research EngineeringData EngineeringAdvanced Information SystemManagementData Integration	2007	53

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