P. Besson - Concepedia

Author

P. Besson

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Also Known As

Besson, P., P Besson, P. Besson, Pascal Besson

135

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

Commissariat à l'Énergie Atomique et aux Énergies Alternatives CEA Grenoble Laboratoire d'Électronique des Technologies de l'Information STMicroelectronics (France)Institut polytechnique de Grenoble

About

P. Besson is an author at Commissariat à l'Énergie Atomique et aux Énergies Alternatives specializing in applied physics, engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	43	1.5K
2	Applied Physics	19	39	1.4K
3	Chemical Engineering	7	7	127
4	Natural Sciences	4	4	273
5	Chemistry	3	3	231

P. Besson

Publications

1.5K

Citations

H-Index

Page 1

	Year	Citations
HfO 2 / SiO 2 interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy O. Renault, D. Samour, J.-F. Damlencourt, Applied Physics Letters Materials ScienceIi-vi SemiconductorSio2 ContributionsInterface ChemistrySi 2P	2002	200
3DVLSI with CoolCube process: An alternative path to scaling P. Batude, C. Fenouillet-Béranger, L. Pasini, EngineeringVlsi DesignComputer ArchitectureComputer-aided DesignOptoelectronic Devices	2015	134
Bonded planar double-metal-gate NMOS transistors down to 10 nm M. Vinet, T. Poiroux, J. Widiez, IEEE Electron Device Letters Alignment MarksElectrical EngineeringEngineeringNanoelectronicsScaling Rules	2005	128
Engineering strained silicon on insulator wafers with the Smart CutTM technology B. Ghyselen, Jean‐Michel Hartmann, T. Ernst, Solid-State Electronics Insulator WafersSemiconductor TechnologyElectrical EngineeringEngineeringSilicon Debugging	2004	114
First demonstration of a CMOS over CMOS 3D VLSI CoolCube™ integration on 300mm wafers Laurent Brunet, P. Batude, C. Fenouillet-Béranger, EngineeringVlsi DesignIntegrated CircuitsInterconnect (Integrated Circuits)Cmos Coolcube™ Integration	2016	74
3D Sequential Integration: Application-driven technological achievements and guidelines P. Batude, Laurent Brunet, C. Fenouillet-Béranger, Contact PitchEngineering3D ModelingComputer-aided DesignSequential Integration	2017	73
New insights on bottom layer thermal stability and laser annealing promises for high performance 3D VLSI C. Fenouillet-Béranger, B. Mathieu, B. Prévitali, EngineeringVlsi DesignNew InsightsIntegrated CircuitsSemiconductor Device	2014	56
Breakthroughs in 3D Sequential technology Laurent Brunet, C. Fenouillet-Béranger, P. Batude, EngineeringComputer Architecture3D ModelingComputer-aided DesignIntegrated Circuits	2018	51
Insights on fundamental mechanisms impacting Ge metal oxide semiconductor capacitors with high-k/metal gate stacks P. Batude, X. Garros, L. Clavelier, Journal of Applied Physics EngineeringCv MeasurementsSemiconductor DeviceSemiconductorsCv Curves	2007	48
Low thermal budget surface preparation of Si and SiGe Alexandra Abbadie, Jean‐Michel Hartmann, P. Holliger, Applied Surface Science Materials EngineeringMaterials ScienceEngineeringMicrofabricationSurface Science	2003	38

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