P. Besson

HfO 2 / SiO 2 interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy

O. Renault, D. Samour, J.-F. Damlencourt et al. · Applied Physics Letters · 2002 · 200 citations

Materials Science, Ii-vi Semiconductor, Sio2 Contributions +14

3DVLSI with CoolCube process: An alternative path to scaling

P. Batude, C. Fenouillet-Béranger, L. Pasini et al. · 2015 · 134 citations

Engineering, Vlsi Design, Computer Architecture +23

Bonded planar double-metal-gate NMOS transistors down to 10 nm

M. Vinet, T. Poiroux, J. Widiez et al. · IEEE Electron Device Letters · 2005 · 128 citations

Alignment Marks, Electrical Engineering, Engineering +7

Engineering strained silicon on insulator wafers with the Smart CutTM technology

B. Ghyselen, Jean‐Michel Hartmann, T. Ernst et al. · Solid-State Electronics · 2004 · 114 citations

Insulator Wafers, Semiconductor Technology, Electrical Engineering +8

First demonstration of a CMOS over CMOS 3D VLSI CoolCube™ integration on 300mm wafers

Laurent Brunet, P. Batude, C. Fenouillet-Béranger et al. · 2016 · 74 citations

Engineering, Vlsi Design, Integrated Circuits +18