M. Gendry

Oxides on GaAs and InAs surfaces: An x-ray-photoelectron-spectroscopy study of reference compounds and thin oxide layers

G. Hollinger, R. Skheyta-Kabbani, M. Gendry · Physical review. B, Condensed matter · 1994 · 301 citations

Engineering, Oxidation Resistance, Chemical Composition +18

Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001)

J. Brault, M. Gendry, G. Grenet et al. · Applied Physics Letters · 1998 · 142 citations · Full text

Materials Science, Ii-vi Semiconductor, Inas Nanostructures +13

Structural and chemical properties of InAs layers grown on InP(100) surfaces by arsenic stabilization

G. Hollinger, D. Gallet, M. Gendry et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990 · 108 citations

Materials Science, Surface Characterization, Epitaxial Growth +15

Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001)

J. Brault, M. Gendry, G. Grenet et al. · Journal of Applied Physics · 2002 · 99 citations · Full text

Inas Nanostructures, Engineering, Chemistry +19

Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on InP(001)

A. Weber, Olivier Gauthier‐Lafaye, F. H. Julien et al. · Applied Physics Letters · 1999 · 88 citations · Full text

Categoryquantum Electronics, Engineering, Oscillator Strength +18