Atomic force microscopy nanomanipulation of silicon nanocrystals for nanodevice fabrication

Abstract

An atomic force microscopy (AFM) tip has been used to manipulate silicon nanocrystals deposited by low-pressure chemical vapour deposition on thermally oxidized p-type Si wafer. Three nanomanipulation methods are presented. The first one catches a nanocrystal with the AFM tip and deposits it elsewhere: the tip is used as an electrostatic 'nano-crane'. The second one simultaneously manipulates a set of nanocrystals in order to draw well-defined unidimensional lines: the tip is used as a 'nano-broom'. The third one manipulates individual nanocrystals with a precision of about 10 nm using both oscillating and contact AFM modes. Switching from strong interaction forces (chemical) to weak ones (van der Waals, electrostatic or capillarity) is the basis of these manipulation methods. We have applied the second method to connect two electrodes drawn by e-beam and lift-off with a 70 nm long silicon nanocrystal chain. Current versus voltage characterization of the nanofabricated device shows that the increase in nanocrystal density gives rise to conduction between the connected electrodes. Resonant tunnelling effects resulting from Si nanocrystal (nc-Si) multiple tunnel junctions have been observed at 300 K. We also show that offset charges directly influence the position of the resonant tunnelling peaks. Finally, the possibility of manipulating nc-Si with a diameter of around 5 nm is shown to be a promising way to fabricate single electron devices operating at room temperature and fully compatible with silicon technology.