Tunnel Junctions

Tunnel Junction is a specialized type of P-N junction semiconductor device in which electron tunneling through a thin potential barrier enables charge transport, distinguished from conventional junctions by its reliance on quantum mechanical tunneling rather than thermal diffusion for current conduction.

6.1K

Publications

335.5K

Citations

14.7K

Authors

1.9K

Institutions

Publications per year

2017–2026

1.2K

Variants

Tunnel Junction

Authors

14.7K

  1. SY
    Shinji Yuasa

    National Institute of Advanced Industrial Science and Technology, Japan

    82 publications · 11.6K citations

    40

    h-index

  2. EY
    Evgeny Y. Tsymbal

    University of Nebraska–Lincoln, United States

    55 publications · 5.4K citations

    36

    h-index

  3. PP
    P. P. Freitas

    Instituto de Engenharia de Sistemas e Computadores Microsistemas e Nanotecnologias, Portugal

    85 publications · 3.3K citations

    34

    h-index

  4. BD
    B. Diény

    CEA Grenoble, France

    67 publications · 4.2K citations

    34

    h-index

  5. HK
    Hitoshi Kubota

    National Institute of Advanced Industrial Science and Technology, Japan

    66 publications · 6.1K citations

    34

    h-index

1–5 of 14.7K

Venues

  1. Applied Physics Letters

    1K publications · 55K citations

    108

    h-index

  2. Physical Review Letters

    PRL · 278 publications · 31K citations

    101

    h-index

  3. Journal of Applied Physics

    630 publications · 25.5K citations

    68

    h-index

  4. Physical review. B, Condensed matter

    PRB · 296 publications · 15.1K citations

    63

    h-index

  5. IEEE Transactions on Electron Devices

    142 publications · 8.6K citations

    52

    h-index

1–5