Journal of Applied Physics · 1985 · 69 citations · 21 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsMaterials PhysicsSemiconductor MaterialsElectronic Band StructureIii-v SemiconductorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsBand Gap EnergyConduction BandElectronic Band GapEnergy Band GapSemiconductor Band Gap DeterminationValence Band
The positions of the acceptor level of vanadium in GaAs, GaP, and InP are estimated. This level is found to be at about Ec−0.14 eV in GaAs and about Ec−0.8 eV in GaP. It is above the conduction band edge in InP. These positions in the three hosts are in agreement with the trends proposed by Ledebo and Ridley. The finding of a very high acceptor level of vanadium in GaAs does not allow to explain the semi-insulating behavior of GaAs:V. Other possible compensating centers are considered.
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Choice Reviews Online · 1995 · 1.7K citations
Deep-level optical spectroscopy in GaAs
A. Chantre, G. Vincent, D. Bois · Physical review. B, Condensed matter · 1981 · 455 citations
Spectroscopic study of vanadium in GaP and GaAs
U. Kaufmann, H. Ennen, J. Schneider et al. · Physical review. B, Condensed matter · 1982 · 78 citations