B. Lambert

Relationship between self-organization and size of InAs islands on InP(001) grown by gas-source molecular beam epitaxy

Anne Ponchet, Alain Le Corre, H. L’Haridon et al. · Applied Physics Letters · 1995 · 193 citations

Semiconductors, Materials Science, Island Size +14

Bloch transport of electrons and holes in superlattice minibands: Direct measurement by subpicosecond luminescence spectroscopy

B. Deveaud, Jagdeep Shah, T. C. Damen et al. · Physical Review Letters · 1987 · 175 citations

Wide-bandgap Semiconductor, Engineering, Bloch Transport +17

Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm

Cyril Paranthoën, Nicolas Bertru, Olivier Dehaese et al. · Applied Physics Letters · 2001 · 169 citations

Optical Materials, Engineering, Height Dispersion Control +20

Observation of one-monolayer size fluctuations in a GaAs/GaAlAs superlattice

B. Deveaud, J.-Y. Emery, A. Chomette et al. · Applied Physics Letters · 1984 · 145 citations

Materials Science, Ii-vi Semiconductor, Photoluminescence +13

Exciton Binding Energy in Small-Period GaAs/Ga _{(1- <i>x</i> )} Al _<i>x</i> As Superlattices

A. Chomette, B. Lambert, B. Deveaud et al. · Europhysics Letters (EPL) · 1987 · 118 citations

Semiconductors, Wide-bandgap Semiconductor, Heavy-hole Exciton +15