A. N. Andreev - Concepedia

Author

A. N. Andreev

Physico-Technical Institute

Also Known As

A. N. Andreev, A.N Andreev, A.N. Andreev

Publications

278

Citations

H-Index

Concepts

All Affiliations

Physico-Technical Institute Centre National de la Recherche Scientifique Ioffe Institute Russian Academy of Sciences Université de Montpellier

About

A. N. Andreev is an author at Physico-Technical Institute specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	178
2	Applied Physics	7	7	161
3	Materials Engineering	4	4	65
4	Electrical Engineering	3	3	94
5	Natural Sciences	1	1	24

A. N. Andreev

Publications

247

Citations

H-Index

Page 1

	Year	Citations
The influence of temperature treatment on the formation of Ni-based Schottky diodes and ohmic contacts to n-6H-SiC M. G. Rastegaeva, A. N. Andreev, Alexander Petrov, Materials Science and Engineering B Materials ScienceElectrical EngineeringEngineeringTemperature TreatmentNi-based Schottky Diodes	1997	55
Fabrication and Test of TQS01—A 90 mm ${\rm Nb}_{3}{\rm Sn}$ Quadrupole Magnet for LARP S. Caspi, D.R. Dietderich, P. Ferracin, IEEE Transactions on Applied Superconductivity Magnetic PropertiesAluminum ShellEngineeringAccelerator PhysicMagnetism	2007	24
UV photodetectors in 6HSiC M. M. Anikin, A. N. Andreev, S.N. Pyatko, Sensors and Actuators A Physical	1992	22
Effect of boron diffusion on the high-voltage behavior of 6H-SiC <i>p</i>+<i>nn</i>+ structures S. Ortolland, Christophe Raynaud, J.P. Chante, Journal of Applied Physics Materials EngineeringSemiconductorsElectrical EngineeringElectronic DevicesBoron Diffusion	1996	22
Allowing for current spreading in semiconductors during measurements of the contact resistivity of ohmic contacts A. N. Andreev, M. G. Rastegaeva, V. P. Rastegaev, Semiconductors	1998	20
Influence of proton irradiation on recombination current in 6H–SiC pn structures Anatoly M. Strel’chuk, V. V. Kozlovski, N.S. Savkina, Materials Science and Engineering B Semiconductor TechnologyElectrical EngineeringEngineeringApplied PhysicsPn Structures	1999	17
Test and Analysis of Technology Quadrupole Shell (TQS) Magnet Models for LARP S. Caspi, G. Ambrosio, A. N. Andreev, IEEE Transactions on Applied Superconductivity Materials ScienceMagnetismBladder TechnologySuperconducting MaterialEngineering	2008	17
Metal–<i>n</i>-6H–SiC surface barrier height—Experimental data and description in the traditional terms A. L. Syrkin, A. N. Andreev, A. А. Lebedev, Journal of Applied Physics Materials EngineeringMaterials ScienceTraditional TermsEnergy Band GapEngineering	1995	15
Surface barrier height in metal-n-6H-SiC structures A. L. Syrkin, A. N. Andreev, A. А. Lebedev, Materials Science and Engineering B Materials EngineeringMaterials ScienceSemiconductor TechnologyEngineeringSurface Barrier Height	1995	14
High-efficiency (49%) and high-power photovoltaic cells based on gallium antimonide M. G. Rastegaeva, S. V. Sorokina, A. V. Malevskaya, Semiconductors	2006	14

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