S. Ortolland

Recent progress and current issues in SiC semiconductor devices for power applications

C. Mark Johnson, Nicolas G. Wright, Michael J. Uren et al. · IEE Proceedings - Circuits Devices and Systems · 2001 · 31 citations

Sic Semiconductor Devices, Engineering, Power Electronics +17

Effect of boron diffusion on the high-voltage behavior of 6H-SiC <i>p</i>+<i>nn</i>+ structures

S. Ortolland, Christophe Raynaud, J.P. Chante et al. · Journal of Applied Physics · 1996 · 22 citations · Full text

Materials Engineering, Semiconductors, Electrical Engineering +14

Periphery protection for silicon carbide devices: state of the art and simulation

Dominique Planson, Marie‐Laure Locatelli, S. Ortolland et al. · Materials Science and Engineering B · 1997 · 17 citations

Electrical Engineering, Engineering, Power Device +7

Low temperature annealing of 4H–SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation

Andrew P. Knights, M. A. Lourenço, K. P. Homewood et al. · Journal of Applied Physics · 2000 · 15 citations

Point Defects, Engineering, Integrated Circuits +16

Enhanced nitrogen diffusion in 4H-SiC

G. J. Phelps, Nicolas G. Wright, E.G. Chester et al. · Applied Physics Letters · 2002 · 12 citations

Materials Science, Nitrogen Implant, Materials Engineering +10