Enhanced nitrogen diffusion in 4H-SiC

Abstract

Experimental evidence is given for boron (B) enhanced diffusion of nitrogen (N) in ion-implanted 4H silicon carbide (4H-SiC), when a nitrogen implant is co-doped within an existing boron p-type well. The co-implanted nitrogen is shown to diffuse continuously with time when samples are annealed at 1600 °C—with little movement of the boron p-well implant profile. An effective nitrogen in boron diffusivity at 1600 °C is determined to be at least 60 times larger than that of a mono-doped nitrogen implant.