Transient enhanced diffusion of implanted boron in 4H-silicon carbide

Abstract

Experimental evidence is given for transient enhanced diffusion of boron (B) in ion-implanted silicon carbide (SiC). The implanted B is diffusing several μm into the samples when annealed at 1600 and 1700 °C for 10 min, but the in-diffused tails remain unaffected when the annealing times are increased to 30 min at the same temperatures. A lower limit of the effective B diffusivity at 1600 °C is determined to 7×10−12 cm2/s, which is 160 times larger than the equilibrium B diffusivity given in the literature.