H. Bleichner

High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects

H. Lendenmann, Fanny Dahlquist, Peder Bergman et al. · Materials science forum · 2002 · 139 citations

Semiconductor Technology, Electrical Engineering, Engineering +6

Temperature and injection dependence of the Shockley–Read–Hall lifetime in electron irradiated <i>n</i>-type silicon

H. Bleichner, Per Jönsson, N. Keskitalo et al. · Journal of Applied Physics · 1996 · 66 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14

The ambipolar diffusion coefficient in silicon: Dependence on excess-carrier concentration and temperature

M. Rosling, H. Bleichner, Per Jönsson et al. · Journal of Applied Physics · 1994 · 63 citations

Engineering, Semiconductor Materials, Excess-carrier Concentration +19

Bright-line defect formation in silicon carbide injection diodes

Andrey O. Konstantinov, H. Bleichner · Applied Physics Letters · 1997 · 51 citations

Engineering, Optoelectronic Devices, Semiconductor Nanostructures +18

Transient enhanced diffusion of implanted boron in 4H-silicon carbide

Martin S. Janson, M. K. Linnarsson, Anders Hallén et al. · Applied Physics Letters · 2000 · 48 citations

Materials Science, Materials Engineering, Implanted Boron +11