N. Keskitalo

Electrically active point defects in n-type 4H–SiC

J. P. Doyle, Margareta K. Linnarsson, P. Pellegrino et al. · Journal of Applied Physics · 1998 · 74 citations · Full text

Materials Science, Semiconductors, Electrical Engineering +13

Temperature and injection dependence of the Shockley–Read–Hall lifetime in electron irradiated <i>n</i>-type silicon

H. Bleichner, Per Jönsson, N. Keskitalo et al. · Journal of Applied Physics · 1996 · 66 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14

MeV-ion-induced defects in organic crystals

Judit Kopniczky, Anders Hallén, N. Keskitalo et al. · Radiation Measurements · 1995 · 30 citations

Engineering, Applied Physics, Defect Formation +5

Proximity gettering of platinum in proton irradiated silicon

D. C. Schmidt, Bengt Svensson, N. Keskitalo et al. · Journal of Applied Physics · 1998 · 21 citations · Full text

Materials Science, Ion Implantation, Proximity Gettering +12

Defect evolution in MeV ion-implanted silicon

J. Lalita, N. Keskitalo, Anders Hallén et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1996 · 21 citations

Ion Implantation, Electrical Engineering, Engineering +4