D. C. Schmidt

Photoluminescence, deep level transient spectroscopy and transmission electron microscopy measurements on MeV self-ion implanted and annealed <i>n</i>-type silicon

D. C. Schmidt, B. G. Svensson, M. Seibt et al. · Journal of Applied Physics · 2000 · 48 citations

Engineering, Optoelectronic Devices, Semiconductor Device +16

Proximity gettering of platinum in proton irradiated silicon

D. C. Schmidt, Bengt Svensson, N. Keskitalo et al. · Journal of Applied Physics · 1998 · 21 citations · Full text

Materials Science, Ion Implantation, Proximity Gettering +12

The influence of diffusion temperature and ion dose on proximity gettering of platinum in silicon implanted with alpha particles at low doses

D. C. Schmidt, B. G. Svensson, S. Godey et al. · Applied Physics Letters · 1999 · 19 citations

Materials Science, Ion Implantation, Sintering +13

2 MeV electron irradiation of silicon at elevated temperatures: Influence on platinum diffusion and creation of electrically active defects

D. C. Schmidt, B. G. Svensson, J. L. Lindström et al. · Journal of Applied Physics · 1999 · 11 citations

Materials Science, Electrical Engineering, Ion Implantation +15