J. Lalita

Generation of vacancy-type point defects in single collision cascades during swift-ion bombardment of silicon

B. G. Svensson, C. Jagadish, Anders Hallén et al. · Physical review. B, Condensed matter · 1997 · 99 citations

Point Defects, Engineering, Vacancy-type Point Defects +16

Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted<i>n</i>-type silicon

P. Pellegrino, Patrick Lévêque, J. Lalita et al. · Physical review. B, Condensed matter · 2001 · 88 citations · Full text

Semiconductors, Room Temperature, Electrical Engineering +13

Point defects in MeV ion-implanted silicon studied by deep level transient spectroscopy

Bengt Svensson, C. Jagadish, Anders Hallén et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1995 · 57 citations

Electrical Engineering, Ion Implantation, Point Defects +8

Hydrogen interaction with implantation induced point defects in <i>p</i>-type silicon

S. Fatima, C. Jagadish, J. Lalita et al. · Journal of Applied Physics · 1999 · 27 citations

Materials Science, Mobile Hydrogen, Electrical Engineering +15

Point defects observed in crystalline silicon implanted by MeV Si ions at elevated temperatures

J. Lalita, B. G. Svensson, C. Jagadish · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1995 · 24 citations

Ion Implantation, Crystalline Silicon, Point Defects +9