Margareta K. Linnarsson

Effects of Back Contact Instability on Cu₂ZnSnS₄ Devices and Processes

Jonathan J. S. Scragg, Tomáš Kubart, Jörn Timo Wätjen et al. · Chemistry of Materials · 2013 · 293 citations · Full text

Electrical activation of high concentrations of N+ and P+ ions implanted into 4H–SiC

Michael Laube, Frank Schmid, Gerhard Pensl et al. · Journal of Applied Physics · 2002 · 123 citations

Materials Science, High Concentrations, Electrical Engineering +15

Nitrogen doping of epitaxial silicon carbide

Urban Forsberg, Örjan Danielsson, Anne Henry et al. · Journal of Crystal Growth · 2002 · 79 citations

Materials Science, Materials Engineering, Engineering +4

Electrically active point defects in n-type 4H–SiC

J. P. Doyle, Margareta K. Linnarsson, P. Pellegrino et al. · Journal of Applied Physics · 1998 · 74 citations · Full text

Materials Science, Semiconductors, Electrical Engineering +13

Advances in wide bandgap SiC for optoelectronics

Haiyan Ou, Yiyu Ou, Aikaterini Argyraki et al. · The European Physical Journal B · 2014 · 70 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +5