Örjan Danielsson

Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers

Örjan Danielsson, Anne Henry, Erik Janzén · Journal of Crystal Growth · 2002 · 97 citations

Materials Engineering, Engineering, Growth Rate Predictions +6

Nitrogen doping of epitaxial silicon carbide

Urban Forsberg, Örjan Danielsson, Anne Henry et al. · Journal of Crystal Growth · 2002 · 79 citations

Materials Science, Materials Engineering, Engineering +4

Aluminum doping of epitaxial silicon carbide

Urban Forsberg, Örjan Danielsson, Anne Henry et al. · Journal of Crystal Growth · 2003 · 69 citations

Materials Engineering, Materials Science, Engineering +5

Precursors for carbon doping of GaN in chemical vapor deposition

Xun Li, Örjan Danielsson, Henrik Pedersen et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2015 · 38 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

Xuehuan Li, Johan Bergsten, Daniel Nilsson et al. · Applied Physics Letters · 2015 · 36 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13