M. Rosling

The ambipolar diffusion coefficient in silicon: Dependence on excess-carrier concentration and temperature

M. Rosling, H. Bleichner, Per Jönsson et al. · Journal of Applied Physics · 1994 · 66 citations

Engineering, Electrical Engineering, Materials Science +17

Deep level transient spectroscopy analysis of fast ion tracks in silicon

Anders Hallén, B. U. R. Sundqvist, Z. F. Paska et al. · Journal of Applied Physics · 1990 · 61 citations · Full text

Natural Sciences, Materials Science, Physics +14

A novel technique for the simultaneous measurement of ambipolar carrier lifetime and diffusion coefficient in silicon

M. Rosling, H. Bleichner, Måns Lundqvist et al. · Solid-State Electronics · 1992 · 29 citations

Engineering, Electrical Engineering, Materials Science +17

A study of turn-off limitations and failure mechanisms of GTO thyristors by means of 2-D time-resolved optical measurements

H. Bleichner, Mietek Bakowski, M. Rosling et al. · Solid-State Electronics · 1992 · 24 citations

Engineering, Electrical Engineering, Materials Science +17

A time-resolved optical system for spatial characterization of the carrier distribution in a gate turn-off thyristor (GTO)

H. Bleichner, E. Nordlander, M. Rosling et al. · IEEE Transactions on Instrumentation and Measurement · 1990 · 22 citations

Engineering, Electrical Engineering, Electronic Materials +15