E. Nordlander

Temperature and injection dependence of the Shockley–Read–Hall lifetime in electron irradiated <i>n</i>-type silicon

H. Bleichner, Per Jönsson, N. Keskitalo et al. · Journal of Applied Physics · 1996 · 66 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14

The ambipolar diffusion coefficient in silicon: Dependence on excess-carrier concentration and temperature

M. Rosling, H. Bleichner, Per Jönsson et al. · Journal of Applied Physics · 1994 · 63 citations

Engineering, Semiconductor Materials, Excess-carrier Concentration +19

The ambipolar Auger coefficient: Measured temperature dependence in electron irradiated and highly injected n-type silicon

Petra E. Jönsson, H. Bleichner, M. Isberg et al. · Journal of Applied Physics · 1997 · 42 citations

Engineering, Temperature Dependence, Injected N-type Silicon +19

A novel technique for the simultaneous measurement of ambipolar carrier lifetime and diffusion coefficient in silicon

M. Rosling, H. Bleichner, Måns Lundqvist et al. · Solid-State Electronics · 1992 · 29 citations

Electrical Engineering, Engineering, Physics +12

A study of turn-off limitations and failure mechanisms of GTO thyristors by means of 2-D time-resolved optical measurements

H. Bleichner, Mietek Bakowski, M. Rosling et al. · Solid-State Electronics · 1992 · 24 citations

Photonics, Electrical Engineering, Optical Materials +9