M. K. Linnarsson

Annealing behavior between room temperature and 2000 °C of deep level defects in electron-irradiated n-type 4H silicon carbide

Giovanni Alfieri, Edouard V. Monakhov, B. G. Svensson et al. · Journal of Applied Physics · 2005 · 123 citations

Engineering, Silicon Carbide, Defect Tolerance +16

New beam line for time-of-flight medium energy ion scattering with large area position sensitive detector

M. K. Linnarsson, Anders Hallén, Johan Åström et al. · Review of Scientific Instruments · 2012 · 67 citations · Full text

Engineering, Ion Beam, Instrumentation +16

Transient enhanced diffusion of implanted boron in 4H-silicon carbide

Martin S. Janson, M. K. Linnarsson, Anders Hallén et al. · Applied Physics Letters · 2000 · 48 citations

Materials Science, Materials Engineering, Implanted Boron +11

Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material

M. K. Linnarsson, Martin S. Janson, U. Zimmermann et al. · Applied Physics Letters · 2001 · 46 citations · Full text

Materials Science, Materials Engineering, High Temperature Materials +12

Electron and Hole Capture Cross-Sections of Fe Acceptors in GaN:Fe Epitaxially Grown on Sapphire

T. Aggerstam, Andrea Pinos, S. Marcinkevičius et al. · Journal of Electronic Materials · 2007 · 45 citations · Full text

Wide-bandgap Semiconductor, Fe Acceptors, Hole Capture Cross-sections +8