M. K. Linnarsson - Concepedia

Author

M. K. Linnarsson

KTH Royal Institute of Technology

Also Known As

Linnarsson, M. K., Linnarsson, Margareta, M K Linnarsson, M. K. Linnarsson, M. Linnarsson, M.K. Linnarsson

Publications

488

Citations

H-Index

Concepts

All Affiliations

KTH Royal Institute of Technology Kista Photonics Research Center Australian National University University of Oslo Uppsala University

About

M. K. Linnarsson is an author at KTH Royal Institute of Technology specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	10	10	454
2	Engineering	9	9	409
3	Materials Engineering	4	4	261
4	Electrical Engineering	3	3	189
5	Natural Sciences	1	1	67

M. K. Linnarsson

Publications

454

Citations

H-Index

Page 1

	Year	Citations
Annealing behavior between room temperature and 2000 °C of deep level defects in electron-irradiated n-type 4H silicon carbide Giovanni Alfieri, Edouard V. Monakhov, B. G. Svensson, Journal of Applied Physics EngineeringSilicon CarbideDefect ToleranceDeep Level Defects4H-sic Epitaxial Layers	2005	123
New beam line for time-of-flight medium energy ion scattering with large area position sensitive detector M. K. Linnarsson, Anders Hallén, Johan Åström, Review of Scientific Instruments EngineeringIon BeamInstrumentationIon EmissionNew Beam Line	2012	67
Transient enhanced diffusion of implanted boron in 4H-silicon carbide Martin S. Janson, M. K. Linnarsson, Anders Hallén, Applied Physics Letters Materials ScienceMaterials EngineeringImplanted BoronSemiconductor TechnologyEngineering	2000	48
Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material M. K. Linnarsson, Martin S. Janson, U. Zimmermann, Applied Physics Letters Materials ScienceMaterials EngineeringHigh Temperature MaterialsEngineeringCrystalline Defects	2001	46
Electron and Hole Capture Cross-Sections of Fe Acceptors in GaN:Fe Epitaxially Grown on Sapphire T. Aggerstam, Andrea Pinos, S. Marcinkevičius, Journal of Electronic Materials Wide-bandgap SemiconductorFe AcceptorsHole Capture Cross-sectionsPhysicsApplied Physics	2007	45
Ion implantation range distributions in silicon carbide Martin S. Janson, M. K. Linnarsson, Anders Hallén, Journal of Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringIon ImplantationEngineering	2003	44
Solubility limits of dopants in 4H–SiC M. K. Linnarsson, U. Zimmermann, J. Wong‐Leung, Applied Surface Science Materials ScienceEngineeringIntrinsic ImpurityApplied PhysicsSolubility Limits	2002	23
Ion implantation in 4H–SiC J. Wong‐Leung, Martin S. Janson, Andrej Kuznetsov, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Ion ImplantationElectrical EngineeringEngineeringApplied PhysicsIon Emission	2007	22
Diffusion of Hydrogen in 6H Silicon Carbide M. K. Linnarsson, J. P. Doyle, B. G. Svensson MRS Proceedings EngineeringHydrogen TransitionApplied PhysicsSilicon CarbideHydrogen	1996	20
Formation of precipitates in heavily boron doped 4H-SiC M. K. Linnarsson, Martin S. Janson, N. Nordell, Applied Surface Science Boron NitrideEngineeringApplied PhysicsCondensed Matter PhysicsCarbide	2006	16

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