T. Aggerstam

Electron and Hole Capture Cross-Sections of Fe Acceptors in GaN:Fe Epitaxially Grown on Sapphire

T. Aggerstam, Andrea Pinos, S. Marcinkevičius et al. · Journal of Electronic Materials · 2007 · 45 citations · Full text

Wide-bandgap Semiconductor, Fe Acceptors, Hole Capture Cross-sections +8

Investigation of the interface properties of MOVPE grown AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire

T. Aggerstam, S. Lourdudoss, Henry H. Radamson et al. · Thin Solid Films · 2006 · 42 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +5

Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates

A. Ougazzaden, David J. Rogers, F. Hosseini Téhérani et al. · Journal of Crystal Growth · 2007 · 28 citations

Materials Engineering, Materials Science, Engineering +8

Enhancement of both direct-current and microwave characteristics of AlGaN∕GaN high-electron-mobility transistors by furnace annealing

S. Arulkumaran, Geok Ing Ng, Chee Leong Tan et al. · Applied Physics Letters · 2006 · 19 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +14

AlGaN/GaN high‐electron‐mobility transistors on sapphire with Fe‐doped GaN buffer layer by MOVPE

T. Aggerstam, Martin Sjödin, S. Lourdudoss · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2006 · 15 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +9