S. Arulkumaran - Concepedia

Author

S. Arulkumaran

Nanyang Technological University ORCID

Also Known As

S Arulkumaran, S. ARULKUMARAN, S. Arulkumaran, Subramaniam Arulkumaran, Subramanium Arulkumaran

177

Publications

Citations

H-Index

Concepts

All Affiliations

Nanyang Technological University Nagoya Institute of Technology Agency for Science, Technology and Research Institute of Materials Research and Engineering Singapore-MIT Alliance for Research and Technology

About

S. Arulkumaran is an author at Nanyang Technological University specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	34	82	3.5K
2	Applied Physics	34	82	3.5K
3	Electrical Engineering	34	77	3.4K
4	Materials Science	13	16	741
5	Materials Engineering	11	11	432

S. Arulkumaran

Publications

3.8K

Citations

H-Index

Page 1

	Year	Citations
Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride S. Arulkumaran, Takashi Egawa, Hiroyasu Ishikawa, Applied Physics Letters Wide-bandgap SemiconductorEngineeringBreakdown VoltageAlgan/gan High-electron-mobility TransistorsSemiconductor Device	2004	241
Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density S. Arulkumaran, Takashi Egawa, Hiroyasu Ishikawa, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringSemiconductor TechnologyEngineering	1998	193
Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation Z. H. Liu, Geok Ing Ng, Hong Zhou, Applied Physics Letters Sin/al2o3 PassivationTrapping EffectsElectrical EngineeringWide-bandgap SemiconductorEngineering	2011	120
Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon S. Arulkumaran, Takashi Egawa, S. Matsui, Applied Physics Letters Materials EngineeringLayer ThicknessElectrical EngineeringWide-bandgap SemiconductorEngineering	2005	115
Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator Z. H. Liu, Geok Ing Ng, S. Arulkumaran, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorAl2o3 Thin Layer	2009	108
AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111) S. Tripathy, Vivian Kaixin Lin, Surani Bin Dolmanan, Applied Physics Letters	2012	106
High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates S. Arulkumaran, Takashi Egawa, Hiroyasu Ishikawa, Applied Physics Letters Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2002	105
Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors S. Arulkumaran, Takashi Egawa, Hiroyasu Ishikawa, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2003	104
Characterization of different-Al-content AlxGa1−xN/GaN heterostructures and high-electron-mobility transistors on sapphire S. Arulkumaran, Takashi Egawa, Hiroyasu Ishikawa, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering	2003	97
Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor Z. H. Liu, Geok Ing Ng, S. Arulkumaran, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2011	84

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