S. Arulkumaran

Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride

S. Arulkumaran, Takashi Egawa, Hiroyasu Ishikawa et al. · Applied Physics Letters · 2004 · 241 citations

Wide-bandgap Semiconductor, Engineering, Breakdown Voltage +16

Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density

S. Arulkumaran, Takashi Egawa, Hiroyasu Ishikawa et al. · Applied Physics Letters · 1998 · 193 citations

Materials Science, Semiconductors, Electrical Engineering +12

Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation

Z. H. Liu, Geok Ing Ng, Hong Zhou et al. · Applied Physics Letters · 2011 · 120 citations

Sin/al2o3 Passivation, Trapping Effects, Electrical Engineering +12

Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon

S. Arulkumaran, Takashi Egawa, S. Matsui et al. · Applied Physics Letters · 2005 · 115 citations

Materials Engineering, Layer Thickness, Electrical Engineering +15

Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator

Z. H. Liu, Geok Ing Ng, S. Arulkumaran et al. · Applied Physics Letters · 2009 · 108 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12