Z. H. Liu

Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator

Z. H. Liu, Geok Ing Ng, S. Arulkumaran et al. · Applied Physics Letters · 2009 · 108 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from −50 to 200 °C

Z. H. Liu, S. Arulkumaran, Geok Ing Ng · Applied Physics Letters · 2009 · 70 citations

Semiconductors, Electron Density, Electrical Engineering +13

High vertical breakdown strength in with low specific on‐resistance AlGaN/AlN/GaN HEMTs on silicon

S. Arulkumaran, S. Vicknesh, Geok Ing Ng et al. · physica status solidi (RRL) - Rapid Research Letters · 2010 · 21 citations

Materials Engineering, Semiconductor Technology, Electrical Engineering +8

Low Specific On-Resistance AlGaN/AlN/GaN High Electron Mobility Transistors on High Resistivity Silicon Substrate

S. Arulkumaran, S. Vicknesh, Geok Ing Ng et al. · Electrochemical and Solid-State Letters · 2010 · 21 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +9

Enhancement of both direct-current and microwave characteristics of AlGaN∕GaN high-electron-mobility transistors by furnace annealing

S. Arulkumaran, Geok Ing Ng, Chee Leong Tan et al. · Applied Physics Letters · 2006 · 19 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +14