Geok Ing Ng

Flexible Ionic‐Electronic Hybrid Oxide Synaptic TFTs with Programmable Dynamic Plasticity for Brain‐Inspired Neuromorphic Computing

Rohit Abraham John, Jieun Ko, Mohit Rameshchandra Kulkarni et al. · Small · 2017 · 182 citations

Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation

Z. H. Liu, Geok Ing Ng, Hong Zhou et al. · Applied Physics Letters · 2011 · 120 citations

Sin/al2o3 Passivation, Trapping Effects, Electrical Engineering +12

Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator

Z. H. Liu, Geok Ing Ng, S. Arulkumaran et al. · Applied Physics Letters · 2009 · 108 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

S. Tripathy, Vivian Kaixin Lin, Surani Bin Dolmanan et al. · Applied Physics Letters · 2012 · 106 citations

Reactive sputter deposition and characterization of tantalum nitride thin films

K. Radhakrishnan, Geok Ing Ng, R. Gopalakrishnan · Materials Science and Engineering B · 1999 · 91 citations

Materials Science, Engineering, Surface Science +5