Geok Ing Ng - Concepedia

Author

Geok Ing Ng

Nanyang Technological University ORCID

Also Known As

Borui Wang, G I Ng, G Ing Ng, G. I. Ing, G. I. Ng, G. Ng, G.-I. Ng, G.I Ng, G.I. Ing, G.I. Ng

350

Publications

4.9K

Citations

H-Index

Concepts

All Affiliations

Nanyang Technological University University of Michigan Singapore-MIT Alliance for Research and Technology Agency for Science, Technology and Research Institute of Materials Research and Engineering

About

Geok Ing Ng is an author at Nanyang Technological University specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	34	120	3.7K
2	Applied Physics	34	110	3.4K
3	Biomedical Engineering	2	2	55
4	Education	1	1	90
5	Chemical Engineering	1	1	73

Geok Ing Ng

131

Publications

4.2K

Citations

H-Index

Page 1

	Year	Citations
Flexible Ionic‐Electronic Hybrid Oxide Synaptic TFTs with Programmable Dynamic Plasticity for Brain‐Inspired Neuromorphic Computing Rohit Abraham John, Jieun Ko, Mohit Rameshchandra Kulkarni, Small	2017	182
Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation Z. H. Liu, Geok Ing Ng, Hong Zhou, Applied Physics Letters Sin/al2o3 PassivationTrapping EffectsElectrical EngineeringWide-bandgap SemiconductorEngineering	2011	120
Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator Z. H. Liu, Geok Ing Ng, S. Arulkumaran, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorAl2o3 Thin Layer	2009	108
AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111) S. Tripathy, Vivian Kaixin Lin, Surani Bin Dolmanan, Applied Physics Letters	2012	106
Reactive sputter deposition and characterization of tantalum nitride thin films K. Radhakrishnan, Geok Ing Ng, R. Gopalakrishnan Materials Science and Engineering B Materials ScienceEngineeringSurface ScienceApplied PhysicsThin Films	1999	91
0.10 /spl mu/m graded InGaAs channel InP HEMT with 305 GHz f/sub T/ and 340 GHz f/sub max/ M. Wójtowicz, R. Lai, D.C. Streit, IEEE Electron Device Letters Ghz F/sub Max/EngineeringChannel ThicknessRadio FrequencyMeasurement	1994	90
InAlN/GaN HEMTs on Si With High ${{f}}_{\text {T}}$ of 250 GHz Weichuan Xing, Zhihong Liu, Haodong Qiu, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringGan HemtsEngineeringNanoelectronics	2017	86
Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor Z. H. Liu, Geok Ing Ng, S. Arulkumaran, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2011	84
Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon G. Ye, H. Wang, S. Arulkumaran, Applied Physics Letters SemiconductorsGate DielectricsElectrical EngineeringElectronic DevicesEngineering	2013	82
High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Insulator Grown by ALD Zhihong Liu, Geok Ing Ng, S. Arulkumaran, IEEE Electron Device Letters SemiconductorsHigh Microwave-noise PerformanceElectrical EngineeringAlgan/gan MishemtsEngineering	2009	77

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