Hiroyasu Ishikawa

Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method

Guolin Yu, G. Wang, Hiroyasu Ishikawa et al. · Applied Physics Letters · 1997 · 285 citations · Full text

Natural Sciences, Materials Science, Physics +17

Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride

S. Arulkumaran, Takashi Egawa, Hiroyasu Ishikawa et al. · Applied Physics Letters · 2004 · 242 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

GaN on Si Substrate with AlGaN/AlN Intermediate Layer

Hiroyasu Ishikawa, Guangyuan Zhao, Naoyuki Nakada et al. · Japanese Journal of Applied Physics · 1999 · 204 citations

Engineering, Materials Engineering, Materials Science +15

Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density

S. Arulkumaran, Takashi Egawa, Hiroyasu Ishikawa et al. · Applied Physics Letters · 1998 · 193 citations

Engineering, Materials Engineering, Materials Science +17

Thermal stability of GaN on (1 1 1) Si substrate

Hiroyasu Ishikawa, Kensaku Yamamoto, Takashi Egawa et al. · Journal of Crystal Growth · 1998 · 179 citations

Engineering, Materials Engineering, Materials Science +13