Hiroyasu Ishikawa

Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method

Guolin Yu, G. Wang, Hiroyasu Ishikawa et al. · Applied Physics Letters · 1997 · 285 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +23

Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride

S. Arulkumaran, Takashi Egawa, Hiroyasu Ishikawa et al. · Applied Physics Letters · 2004 · 241 citations

Wide-bandgap Semiconductor, Engineering, Breakdown Voltage +16

GaN on Si Substrate with AlGaN/AlN Intermediate Layer

Hiroyasu Ishikawa, Guangyuan Zhao, Naoyuki Nakada et al. · Japanese Journal of Applied Physics · 1999 · 202 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +12

Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density

S. Arulkumaran, Takashi Egawa, Hiroyasu Ishikawa et al. · Applied Physics Letters · 1998 · 193 citations

Materials Science, Semiconductors, Electrical Engineering +12

Thermal stability of GaN on (1 1 1) Si substrate

Hiroyasu Ishikawa, Kensaku Yamamoto, Takashi Egawa et al. · Journal of Crystal Growth · 1998 · 179 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +3