Thermal stability of GaN on (1 1 1) Si substrate

The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer

Anri Watanabe, Tetsuya Takeuchi, Koji Hirosawa et al. · Journal of Crystal Growth · 1993 · 271 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +8

Halide Vapor Phase Epitaxy of Gallium Nitride Films on Sapphire and Silicon Substrates

Nathan Perkins, M. N. Horton, Zvonimir Bandić et al. · MRS Proceedings · 1995 · 34 citations

Materials Science, Engineering, Applied Physics +5

Growth of thin crystalline silicon layers for photovoltaic device use

T.F. Ciszek, T.H. Wang, Richard Burrows et al. · Journal of Crystal Growth · 1993 · 10 citations

Materials Science, Epitaxial Growth, Engineering +9