Concepedia

Publication | Closed Access

Thermal stability of GaN on (1 1 1) Si substrate

DOI

179

Citations

3

References

1998

Year

Hiroyasu Ishikawa, Kensaku Yamamoto, Takashi Egawa, Tetsuo Soga, Takashi Jimbo, Masayoshi Umeno
Journal of Crystal Growth

References

YearCitations

The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer

Anri Watanabe, Tetsuya Takeuchi, Koji Hirosawa,

Journal of Crystal Growth

1993

271

Halide Vapor Phase Epitaxy of Gallium Nitride Films on Sapphire and Silicon Substrates

Nathan Perkins, M. N. Horton, Zvonimir Bandić,

MRS Proceedings

1995

34

Growth of thin crystalline silicon layers for photovoltaic device use

T.F. Ciszek, T.H. Wang, Richard Burrows,

Journal of Crystal Growth

1993

10

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