Halide Vapor Phase Epitaxy of Gallium Nitride Films on Sapphire and Silicon Substrates

Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes

Shuji Nakamura, Takashi Mukai, Masayuki Senoh · Applied Physics Letters · 1994 · 3.8K citations

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P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

Hiroshi Amano, M. Kito, Kazumasa Hiramatsu et al. · Japanese Journal of Applied Physics · 1989 · 2K citations · Full text

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THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN

H. Paul Maruska, J. J. Tietjen · Applied Physics Letters · 1969 · 1.3K citations

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High dislocation densities in high efficiency GaN-based light-emitting diodes

S. D. Lester, F. A. Ponce, M. G. Craford et al. · Applied Physics Letters · 1995 · 961 citations

Engineering, Materials Engineering, Materials Science +17

High-Power GaN P-N Junction Blue-Light-Emitting Diodes

Shuji Nakamura, Takashi Mukai, Masayuki Senoh · Japanese Journal of Applied Physics · 1991 · 835 citations

Engineering, Electrical Engineering, Materials Science +17