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High dislocation densities in high efficiency GaN-based light-emitting diodes
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1995
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Optical MaterialsEngineeringHigh Dislocation DensitiesOptoelectronic DevicesSemiconductorsElectronic DevicesLight-emitting DiodesCompound SemiconductorMaterials ScienceDislocation DensitiesElectrical EngineeringGan-based LedsCrystalline DefectsOptoelectronic MaterialsAluminum Gallium NitrideDislocations ArisesCategoryiii-v SemiconductorSolid-state LightingApplied PhysicsGan Power DeviceOptoelectronics
Light‑emitting diodes made from III–V nitrides have been studied for their electrical, optical, and structural properties, and dislocations are not efficient nonradiative recombination sites in these materials. It is hypothesized that the benign character of dislocations arises from the ionic nature of bonding in the III–V nitrides. LEDs with external quantum efficiencies as high as 4 % were characterized by transmission electron microscopy and found to contain dislocation densities in excess of 2 × 10¹⁰ cm⁻², yet minority carriers in GaN‑based LEDs are remarkably insensitive to the presence of structural defects compared to other III–V arsenide and phosphide LEDs.
The electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III–V nitride material system have been studied. LEDs with external quantum efficiencies as high as 4% were characterized by transmission electron microscopy and found to contain dislocation densities in excess of 2×1010 cm−2. A comparison to other III–V arsenide and phosphide LEDs shows that minority carries in GaN-based LEDs are remarkably insensitive to the presence of structural defects. Dislocations do not act as efficient nonradiative recombination sites in nitride materials. It is hypothesized that the benign character of dislocations arises from the ionic nature of bonding in the III–V nitrides.