High-Power GaN P-N Junction Blue-Light-Emitting Diodes

TLDR

High‑power p‑n junction blue‑LEDs were fabricated using GaN films grown on GaN buffer layers. The devices achieved an external quantum efficiency of 0.18%, output power nearly ten times that of conventional 8‑mcd SiC blue LEDs, a record‑low forward voltage of 4 V at 20 mA, and emitted 430 nm light with a 55 nm FWHM.

Abstract

High-power p-n junction blue-light-emitting diodes (LEDs) were fabricated using GaN films grown with GaN buffer layers. The external quantum efficiency was as high as 0.18%. Output power was almost 10 times higher than that of conventional 8-mcd SiC blue LEDs. The forward voltage was as low as 4 V at a forward current of 20 mA. This forward voltage is the lowest ever reported for GaN LEDs. The peak wavelength and the full width at half-maximum (FWHM) of GaN LEDs were 430 nm and 55 nm, respectively.