J. J. Tietjen

THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN

H. Paul Maruska, J. J. Tietjen · Applied Physics Letters · 1969 · 1.3K citations

Materials Science, Materials Engineering, Electrical Engineering +15

The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and Phosphine

J. J. Tietjen, J. A. Amick · Journal of The Electrochemical Society · 1966 · 275 citations

Semiconductors, Materials Science, Materials Engineering +15

ELECTRON MOBILITY IN GaAs1−<i>x</i>P<i>x</i> ALLOYS

J. J. Tietjen, Leonard R. Weisberg · Applied Physics Letters · 1965 · 62 citations

Semiconductors, Engineering, Applied Physics +3

Current status of negative electron affinity devices

B. F. Williams, J. J. Tietjen · Proceedings of the IEEE · 1971 · 62 citations

Electron Emitter, Photonics, Electrical Engineering +12

Detection of Selenium Clustering in GaAs by Transmission Electron Microscopy

M. S. Abrahams, C. J. Buiocchi, J. J. Tietjen · Journal of Applied Physics · 1967 · 51 citations

Optical Materials, Engineering, Microscopy +19