Concepedia

Naoyuki Nakada

NN

Statistics

Publications

10

Citations

552

H-Index

10

Active since

1999

Affiliations

Nagoya Institute of Technology(Current)

Toyoda Gosei (Japan)

Naoyuki Nakada is an author at Nagoya Institute of Technology specializing in engineering, materials science, and semiconductor materials.

Publications per year

1999–2009

10

Publications

10

GaN on Si Substrate with AlGaN/AlN Intermediate Layer

Hiroyasu Ishikawa, Guangyuan Zhao, Naoyuki Nakada et al. · Japanese Journal of Applied Physics · 1999 · 204 citations

Engineering, Materials Engineering, Materials Science +15

Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

Naoyuki Nakada, Masaharu Nakaji, Hiroyasu Ishikawa et al. · Applied Physics Letters · 2000 · 105 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

High-Quality GaN on Si Substrate Using AlGaN/AlN Intermediate Layer

Hiroyasu Ishikawa, G. Zhao, Naoyuki Nakada et al. · physica status solidi (a) · 1999 · 74 citations

Engineering, Materials Engineering, Materials Science +17

GaN MESFETs on (111) Si substrate grown by MOCVD

Takashi Egawa, Naoyuki Nakada, Hiroyasu Ishikawa et al. · Electronics Letters · 2000 · 39 citations

Engineering, Electrical Engineering, Materials Science +17

Suppression of Crack Generation in GaN/AlGaN Distributed Bragg Reflector on Sapphire by the Insertion of GaN/AlGaN Superlattice Grown by Metal-Organic Chemical Vapor Deposition

Naoyuki Nakada, Hiroyasu Ishikawa, Takashi Egawa et al. · Japanese Journal of Applied Physics · 2003 · 33 citations

Engineering, Materials Engineering, Materials Science +15

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