G. Zhao

Amphoteric Phosphorus Doping for Stable p‐Type ZnO

A. Allenic, Wei Guo, Y. B. Chen et al. · Advanced Materials · 2007 · 84 citations · Full text

Engineering, Chemistry, Shallow Complex Acceptors +19

High-Quality GaN on Si Substrate Using AlGaN/AlN Intermediate Layer

Hiroyasu Ishikawa, G. Zhao, Naoyuki Nakada et al. · physica status solidi (a) · 1999 · 74 citations

Materials Science, Materials Engineering, Electrical Engineering +14

High-resistivity GaN buffer templates and their optimization for GaN-based HFETs

Seth M. Hubbard, G. Zhao, D. Pavlidis et al. · Journal of Crystal Growth · 2005 · 59 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +4

Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement

H. X. Jiang, G. Zhao, Hiroyasu Ishikawa et al. · Journal of Applied Physics · 2001 · 54 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +18

Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates

B. J. Zhang, Takashi Egawa, G. Zhao et al. · Applied Physics Letters · 2001 · 35 citations

Materials Engineering, Materials Science, Electrical Engineering +13