Applied Physics Letters · 2000 · 105 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLight-emitting DiodesOptical SourcesQuantum WellsSemiconductor Device MaterialsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsExternal Quantum EfficiencyGallium Nitride (Gan) MaterialsGallium Nitride Light-emitting DiodesGallium Nitride Power DevicesMetalorganic Chemical Vapor DepositionPower OutputQuantum EfficiencyQuantum Well Light-emitting Diodes
An InGaN multiple-quantum-well light-emitting diode (LED) containing a GaN/AlGaN distributed Bragg reflector has been grown on a sapphire substrate by metalorganic chemical vapor deposition. Comparing with the conventional LED, the output power has been improved from 79 to 120 μW under 20 mA direct current biasing condition and the external quantum efficiency has been also improved from 0.16% to 0.23% under 10 mA dc current.
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Distributed Bragg reflectors based on AlN/GaN multilayers
H. M. Ng, D. Doppalapudi, E. Iliopoulos et al. · Applied Physics Letters · 1999 · 90 citations
High-brightness InGaAlP green light-emitting diodes
Hideto Sugawara, Kazuhiko Itaya, H. Nozaki et al. · Applied Physics Letters · 1992 · 83 citations