T. Jimbo

Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method

Guolin Yu, G. Wang, Hiroyasu Ishikawa et al. · Applied Physics Letters · 1997 · 285 citations · Full text

Natural Sciences, Materials Science, Physics +17

Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride

S. Arulkumaran, Takashi Egawa, Hiroyasu Ishikawa et al. · Applied Physics Letters · 2004 · 242 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Optical properties and X-ray photoelectron spectroscopic study of pure and Pb-doped TiO2 thin films

Md. Matiur Rahman, K. Murali Krishna, Tetsuo Soga et al. · Journal of Physics and Chemistry of Solids · 1999 · 215 citations

Natural Sciences, Materials Science, Physics +16

Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state density

S. Arulkumaran, Takashi Egawa, Hiroyasu Ishikawa et al. · Applied Physics Letters · 1998 · 193 citations

Engineering, Materials Engineering, Materials Science +17

Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal

Natsuko Miura, Takuma Nanjo, Muneyoshi Suita et al. · Solid-State Electronics · 2003 · 174 citations

Engineering, Electrical Engineering, Materials Science +14