Takuma Nanjo

Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal

Natsuko Miura, Takuma Nanjo, Muneyoshi Suita et al. · Solid-State Electronics · 2003 · 171 citations

Materials Engineering, Materials Science, Electrical Engineering +6

Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors

Takuma Nanjo, Misaichi Takeuchi, Muneyoshi Suita et al. · Applied Physics Letters · 2008 · 148 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +8

AlGaN Channel HEMT With Extremely High Breakdown Voltage

Takuma Nanjo, Akifumi Imai, Yosuke Suzuki et al. · IEEE Transactions on Electron Devices · 2013 · 130 citations

Wide-bandgap Semiconductor, Algan Channel Hemt, Electrical Engineering +11

First Operation of AlGaN Channel High Electron Mobility Transistors

Takuma Nanjo, Misaichi Takeuchi, Muneyoshi Suita et al. · Applied Physics Express · 2007 · 87 citations

Wide-bandgap Semiconductor, Electrical Engineering, Wider Bandgap Algan +11

Vertical GaN merged PiN Schottky diode with a breakdown voltage of 2 kV

Tetsuro Hayashida, Takuma Nanjo, Akihiko Furukawa et al. · Applied Physics Express · 2017 · 66 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9