Takuma Nanjo - Concepedia

Author

Takuma Nanjo

Mitsubishi Electric (Japan)ORCID

Also Known As

T Nanjo, T. Nanjo, Takuma NANJO, Takuma Nanjo

Publications

Citations

H-Index

Concepts

All Affiliations

Mitsubishi Electric (Japan)Mitsubishi Electric (Germany)Nagoya Institute of Technology RIKEN Okayama Prefectural University

About

Takuma Nanjo is an author at Mitsubishi Electric (Japan) specializing in applied physics, electrical engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	18	937
2	Applied Physics	18	18	937
3	Electrical Engineering	18	18	937
4	Materials Science	3	3	252
5	Materials Engineering	2	2	189

Takuma Nanjo

Publications

937

Citations

H-Index

Page 1

	Year	Citations
Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal Natsuko Miura, Takuma Nanjo, Muneyoshi Suita, Solid-State Electronics Materials EngineeringMaterials ScienceElectrical EngineeringWide-bandgap SemiconductorEngineering	2003	171
Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors Takuma Nanjo, Misaichi Takeuchi, Muneyoshi Suita, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium Nitride	2008	148
AlGaN Channel HEMT With Extremely High Breakdown Voltage Takuma Nanjo, Akifumi Imai, Yosuke Suzuki, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorAlgan Channel HemtElectrical EngineeringRf Power ModulesEngineering	2013	130
First Operation of AlGaN Channel High Electron Mobility Transistors Takuma Nanjo, Misaichi Takeuchi, Muneyoshi Suita, Applied Physics Express Wide-bandgap SemiconductorElectrical EngineeringWider Bandgap AlganEngineeringNanoelectronics	2007	87
Vertical GaN merged PiN Schottky diode with a breakdown voltage of 2 kV Tetsuro Hayashida, Takuma Nanjo, Akihiko Furukawa, Applied Physics Express Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsPin Schottky Diode	2017	66
Highly resistive GaN layers formed by ion implantation of Zn along the <i>c</i> axis Toshiyuki Oishi, Naruhisa Miura, Muneyoshi Suita, Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringElectronic DevicesResistive Gan Layers	2003	49
Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts Takuma Nanjo, Tsukasa Motoya, Akihumi Imai, Japanese Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2011	35
Effects of Interfacial Thin Metal Layer for High-Performance Pt–Au-Based Schottky Contacts to AlGaN–GaN Natsuko Miura, Toshiyuki Oishi, Takuma Nanjo, IEEE Transactions on Electron Devices Materials ScienceWide-bandgap SemiconductorElectrical EngineeringTi LayerEngineering	2004	32
Ion implantation doping for AlGaN/GaN HEMTs Muneyoshi Suita, Takuma Nanjo, Toshiyuki Oishi, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Wide-bandgap SemiconductorElectrical EngineeringIon ImplantationEngineeringAbstract Selective	2006	30
Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate Takuma Nanjo, Naruhisa Miura, Toshiyuki Oishi, Japanese Journal of Applied Physics SemiconductorsGate StructureElectrical EngineeringWide-bandgap SemiconductorEngineering	2004	27

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