Takuma Nanjo

Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal

Natsuko Miura, Takuma Nanjo, Muneyoshi Suita et al. · Solid-State Electronics · 2003 · 174 citations

Engineering, Electrical Engineering, Materials Science +14

Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors

Takuma Nanjo, Misaichi Takeuchi, Muneyoshi Suita et al. · Applied Physics Letters · 2008 · 152 citations

Engineering, Electrical Engineering, Materials Science +17

AlGaN Channel HEMT With Extremely High Breakdown Voltage

Takuma Nanjo, Akifumi Imai, Yosuke Suzuki et al. · IEEE Transactions on Electron Devices · 2013 · 133 citations

Engineering, Electrical Engineering, Materials Science +17

First Operation of AlGaN Channel High Electron Mobility Transistors

Takuma Nanjo, Misaichi Takeuchi, Muneyoshi Suita et al. · Applied Physics Express · 2007 · 88 citations

Engineering, Electrical Engineering, Materials Science +17

Vertical GaN merged PiN Schottky diode with a breakdown voltage of 2 kV

Tetsuro Hayashida, Takuma Nanjo, Akihiko Furukawa et al. · Applied Physics Express · 2017 · 68 citations

Engineering, Electrical Engineering, Materials Science +17