Tetsuro Hayashida

Vertical GaN merged PiN Schottky diode with a breakdown voltage of 2 kV

Tetsuro Hayashida, Takuma Nanjo, Akihiko Furukawa et al. · Applied Physics Express · 2017 · 68 citations

Engineering, Electrical Engineering, Materials Science +17

Rear-emitter Si heterojunction solar cells with over 23% efficiency

Tatsuro Watahiki, Takeo Furuhata, Tsutomu Matsuura et al. · Applied Physics Express · 2015 · 40 citations

Engineering, Materials Engineering, Materials Science +17

Nanoscale Wet Etching of Physical-Vapor-Deposited Titanium Nitride and Its Application to Sub-30-nm-Gate-Length Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Fabrication

Yongxun Liu, Takahiro Kamei, Kazuhiko Endo et al. · Japanese Journal of Applied Physics · 2010 · 33 citations

Engineering, Electrical Engineering, Materials Science +17

A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Tetsuro Hayashida, Yongxun Liu, Takashi Matsukawa et al. · Japanese Journal of Applied Physics · 2009 · 23 citations

Engineering, Electrical Engineering, Materials Science +15

Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Temperature Dependences of Sputtered Titanium Nitride Gate Work Function and Their Effect on Device Characteristics

Yongxun Liu, Tetsuro Hayashida, Takashi Matsukawa et al. · Japanese Journal of Applied Physics · 2008 · 23 citations

Engineering, Electrical Engineering, Materials Science +17