Takashi Matsukawa - Concepedia

Author

Takashi Matsukawa

National Institute of Advanced Industrial Science and Technology ORCID

Also Known As

T Matsukawa, T. MATSUKAWA, T. Matsukawa, Takashi MATSUKAWA, Takashi Matsukawa, Takashi Matsukawa Takashi Matsukawa

491

Publications

3.8K

Citations

H-Index

125

Concepts

All Affiliations

National Institute of Advanced Industrial Science and Technology Waseda University Mitsubishi Electric (Japan)Meiji University

About

Takashi Matsukawa is an author at National Institute of Advanced Industrial Science and Technology specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	29	112	2.9K
2	Applied Physics	26	86	2.2K
3	Natural Sciences	3	3	70
4	Medicine	1	1	33
5	Biochemistry	1	1	33

Takashi Matsukawa

118

Publications

Citations

H-Index

Page 1

	Year	Citations
Demonstration, Analysis, and Device Design Considerations for Independent DG MOSFETs Meishoku Masahara, Yongxun Liu, Kunihiro Sakamoto, IEEE Transactions on Electron Devices Device ModelingDevice Design GuidelinesElectrical EngineeringEngineeringV/sub Th/ Controllability	2005	130
Ultra-compact 8 × 8 strictly-non-blocking Si-wire PILOSS switch Keijiro Suzuki, Ken Tanizawa, Takashi Matsukawa, Optics Express PhotonicsElectrical EngineeringEngineeringUltra-compact 8Nanoelectronics	2014	117
Investigation of the TiN Gate Electrode With Tunable Work Function and Its Application for FinFET Fabrication Yongxun Liu, Shinya Kijima, Etsuro Sugimata, IEEE Transactions on Nanotechnology Materials ScienceTin Gate ElectrodeElectrical EngineeringEngineeringNanoelectronics	2006	115
Modeling, Simulation, Fabrication, and Characterization of a 10-<inline-formula> <tex-math notation="LaTeX">$\mu$ </tex-math> </inline-formula>W/cm<sup>2</sup> Class Si-Nanowire Thermoelectric Generator for IoT Applications Motohiro Tomita, Shunsuke Oba, Y. Himeda, IEEE Transactions on Electron Devices EngineeringEnergy EfficiencyCmos Process TechnologyIntegrated CircuitsElectronic Devices	2018	69
Variability Analysis of TiN Metal-Gate FinFETs Kazuhiko Endo, S. O’uchi, Yuki Ishikawa, IEEE Electron Device Letters Device ModelingElectrical EngineeringEngineeringVariability AnalysisWork Function Variation	2010	68
Experimental Demonstration of Ultrashort-Channel (3 nm) Junctionless FETs Utilizing Atomically Sharp V-Grooves on SOI Shinji Migita, Yukinori Morita, Takashi Matsukawa, IEEE Transactions on Nanotechnology Dopant Activation EnergyElectrical EngineeringEngineeringPhysicsExperimental Demonstration	2014	67
Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect Yukinori Morita, Takahiro Mori, Shinji Migita, IEEE Electron Device Letters Device ModelingElectrical EngineeringPerformance EnhancementEngineeringNovel Se-tfet Architecture	2014	61
Ultrathin Channel Vertical DG MOSFET Fabricated by Using Ion-Bombardment-Retarded Etching Meishoku Masahara, Yongxun Liu, S. Hosokawa, IEEE Transactions on Electron Devices Materials EngineeringElectrical EngineeringIon ImplantationEngineeringUltrathin Channel	2004	55
Fabrication and characterization of HfC coated Si field emitter arrays Takanobu Sato, Shigehiko Yamamoto, Masayoshi Nagao, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceElectrical EngineeringEngineeringHfc FeasSurface Science	2003	54
Cointegration of High-Performance Tied-Gate Three-Terminal FinFETs and Variable Threshold-Voltage Independent-Gate Four-Terminal FinFETs With Asymmetric Gate-Oxide Thicknesses Yongxun Liu, Takashi Matsukawa, Kazuhiko Endo, IEEE Electron Device Letters Materials ScienceElectrical EngineeringSymmetric Gate-oxide ThicknessesEngineeringSemiconductor Device	2007	54

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