Yukinori Morita

Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

Kunihiko Iwamoto, Yuuichi Kamimuta, Arito Ogawa et al. · Applied Physics Letters · 2008 · 162 citations

Engineering, Electrical Engineering, Materials Science +17

Gate dielectric formation and MIS interface characterization on Ge

Shinichi Takagi, Tatsuro Maeda, Noriyuki Taoka et al. · Microelectronic Engineering · 2007 · 105 citations

Engineering, Electrical Engineering, Materials Science +12

Ideal hydrogen termination of Si(001) surface by wet-chemical preparation

Yukinori Morita, Hiroshi Tokumoto · Applied Physics Letters · 1995 · 93 citations

Natural Sciences, Materials Engineering, Materials Science +17

Ge metal-insulator-semiconductor structures with Ge3N4 dielectrics by direct nitridation of Ge substrates

Tatsuro Maeda, Tetsuji Yasuda, Masayasu Nishizawa et al. · Applied Physics Letters · 2004 · 92 citations

Engineering, Materials Engineering, Materials Science +17

Atomic resolution images of H-terminated Si(111) surfaces in aqueous solutions

Kingo Itaya, Ryutaro Sugawara, Yukinori Morita et al. · Applied Physics Letters · 1992 · 91 citations · Full text

Natural Sciences, Chemistry, Materials Science +17