Tetsuji Yasuda

1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

Ryo Suzuki, Noriyuki Taoka, Masafumi Yokoyama et al. · Applied Physics Letters · 2012 · 164 citations

Engineering, Electrical Engineering, Materials Science +17

Low-temperature preparation of SiO2/Si(100) interfaces using a two-step remote plasma-assisted oxidation-deposition process

Tetsuji Yasuda, Y. Ma, S. Habermehl et al. · Applied Physics Letters · 1992 · 137 citations

Engineering, Materials Engineering, Materials Science +17

Coordination and interface analysis of atomic-layer-deposition Al2O3 on Si(001) using energy-loss near-edge structures

Koji Kimoto, Yoshio Matsui, Toshihide Nabatame et al. · Applied Physics Letters · 2003 · 126 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Ge metal-insulator-semiconductor structures with Ge3N4 dielectrics by direct nitridation of Ge substrates

Tatsuro Maeda, Tetsuji Yasuda, Masayasu Nishizawa et al. · Applied Physics Letters · 2004 · 92 citations

Engineering, Materials Engineering, Materials Science +17

Comparative Studies on Oxygen Diffusion Coefficients for Amorphous and γ-Al₂O₃Films using¹⁸O Isotope

Toshihide Nabatame, Tetsuji Yasuda, Masayasu Nishizawa et al. · Japanese Journal of Applied Physics · 2003 · 88 citations

Natural Sciences, Chemistry, Materials Science +17