Y. Ma

Low-temperature preparation of SiO2/Si(100) interfaces using a two-step remote plasma-assisted oxidation-deposition process

Tetsuji Yasuda, Y. Ma, S. Habermehl et al. · Applied Physics Letters · 1992 · 137 citations

Engineering, Materials Engineering, Materials Science +17

Gate oxide reliability projection to the sub-2 nm regime

B. E. Weir, Md Ashraful Alam, J. Bude et al. · Semiconductor Science and Technology · 2000 · 80 citations

Engineering, Electrical Engineering, Materials Science +17

Gate oxides in 50 nm devices: thickness uniformity improves projected reliability

B. E. Weir, P. J. Silvėrman, Muhammad A. Alam et al. · 2003 · 41 citations

Engineering, Electrical Engineering, Materials Science +17

Low-temperature formation of device-quality SiO2/Si interfaces by a two-step remote plasma-assisted oxidation/deposition process

Tetsuji Yasuda, Y. Ma, S. Habermehl et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 39 citations

Engineering, Materials Engineering, Materials Science +17

Design optimization of stacked layer dielectrics for minimum gate leakage currents

J Zhang, J.S. Yuan, Y. Ma et al. · Solid-State Electronics · 2000 · 27 citations · Full text

Engineering, Electrical Engineering, Materials Science +16