Toshihide Nabatame - Concepedia

Author

Toshihide Nabatame

National Institute for Materials Science ORCID

Also Known As

Chang-Yong Nam, Nabatame, Toshihide, T Nabatame, T. Nabatame, Toshihide NABATAME, Toshihide Nabatame, Toshihide Nabatame Toshihide Nabatame

439

Publications

5.1K

Citations

H-Index

114

Concepts

All Affiliations

National Institute for Materials Science The University of Tokyo National Institute of Advanced Industrial Science and Technology Hitachi (Japan)Association of Super-Advanced Electronics

About

Toshihide Nabatame is an author at National Institute for Materials Science specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	33	113	3.8K
2	Applied Physics	31	96	3.4K
3	Natural Sciences	8	8	307
4	Medicine	1	1	13
5	Biochemistry	1	1	13

Toshihide Nabatame

129

Publications

4.5K

Citations

H-Index

Page 1

	Year	Citations
Rutile-type TiO2 thin film for high-k gate insulator Masaru Kadoshima, Masahiko Hiratani, Yasuhiro Shimamoto, Thin Solid Films EngineeringOxide ElectronicsApplied PhysicsHigh-k Gate InsulatorThin Films	2003	243
Infrared Perfect Absorbers Fabricated by Colloidal Mask Etching of Al–Al<sub>2</sub>O<sub>3</sub>–Al Trilayers Thang Duy Dao, Kai Chen, Satoshi Ishii, ACS Photonics	2015	195
Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface Kunihiko Iwamoto, Yuuichi Kamimuta, Arito Ogawa, Applied Physics Letters Dipole FormationElectrical EngineeringEngineeringHigh-k Metal-oxide-semiconductor DevicesNanoelectronics	2008	159
Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications Shinya Aikawa, Toshihide Nabatame, Kazuhito Tsukagoshi Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringMaterials EngineeringBond-dissociation Energy	2013	141
Coordination and interface analysis of atomic-layer-deposition Al2O3 on Si(001) using energy-loss near-edge structures Koji Kimoto, Yoshio Matsui, Toshihide Nabatame, Applied Physics Letters Aluminium NitrideEngineeringChemistryChemical DepositionSilicon On Insulator	2003	126
Hole Array Perfect Absorbers for Spectrally Selective Midwavelength Infrared Pyroelectric Detectors Thang Duy Dao, Satoshi Ishii, Takahiro Yokoyama, ACS Photonics Optical MaterialsEngineeringOptoelectronic DevicesMetallic NanomaterialsExcellent Spectral Selectivity	2016	112
Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability Takio Kizu, Shinya Aikawa, Nobuhiko Mitoma, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringIndium OxideEngineering	2014	103
Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies Nobuhiko Mitoma, Shinya Aikawa, Xu Gao, Applied Physics Letters Materials ScienceElectrical EngineeringOxygen VacanciesElectronic MaterialsEngineering	2014	100
Improvement in ferroelectricity of Hf<i><sub>x</sub></i>Zr<sub>1−</sub><i><sub>x</sub></i>O<sub>2</sub>thin films using ZrO<sub>2</sub>seed layer Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Applied Physics Express Materials ScienceMultiferroicsEngineeringFerroelectric ApplicationCrystal Growth Technology	2017	98
Comparative Studies on Oxygen Diffusion Coefficients for Amorphous and γ-Al<sub>2</sub>O<sub>3</sub>Films using<sup>18</sup>O Isotope Toshihide Nabatame, Tetsuji Yasuda, Masayasu Nishizawa, Japanese Journal of Applied Physics Materials ScienceEngineeringCrystalline DefectsBarrier LayerOxide Electronics	2003	88

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