Toshihide Nabatame

Rutile-type TiO2 thin film for high-k gate insulator

Masaru Kadoshima, Masahiko Hiratani, Yasuhiro Shimamoto et al. · Thin Solid Films · 2003 · 243 citations

Engineering, Oxide Electronics, Applied Physics +3

Infrared Perfect Absorbers Fabricated by Colloidal Mask Etching of Al–Al₂O₃–Al Trilayers

Thang Duy Dao, Kai Chen, Satoshi Ishii et al. · ACS Photonics · 2015 · 195 citations

Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

Kunihiko Iwamoto, Yuuichi Kamimuta, Arito Ogawa et al. · Applied Physics Letters · 2008 · 159 citations

Dipole Formation, Electrical Engineering, Engineering +15

Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications

Shinya Aikawa, Toshihide Nabatame, Kazuhito Tsukagoshi · Applied Physics Letters · 2013 · 141 citations · Full text

Materials Science, Semiconductors, Electrical Engineering +14

Coordination and interface analysis of atomic-layer-deposition Al2O3 on Si(001) using energy-loss near-edge structures

Koji Kimoto, Yoshio Matsui, Toshihide Nabatame et al. · Applied Physics Letters · 2003 · 126 citations

Aluminium Nitride, Engineering, Chemistry +19