Yuuichi Kamimuta

Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

Kunihiko Iwamoto, Yuuichi Kamimuta, Arito Ogawa et al. · Applied Physics Letters · 2008 · 162 citations

Engineering, Electrical Engineering, Materials Science +17

First demonstration and performance improvement of ferroelectric HfO<inf>2</inf>-based resistive switch with low operation current and intrinsic diode property

Shosuke Fujii, Yuuichi Kamimuta, Tsunehiro Ino et al. · 2016 · 107 citations

Engineering, Electrical Engineering, Materials Science +17

Direct Comparison of ZrO₂ and HfO₂ on Ge Substrate in Terms of the Realization of Ultrathin High-κ Gate Stacks

Yoshiki Kamata, Yuuichi Kamimuta, Tsunehiro Ino et al. · Japanese Journal of Applied Physics · 2005 · 91 citations

Engineering, Materials Engineering, Materials Science +17

Re-Examination of Vth Window and Reliability in HfO2 FeFET Based on the Direct Extraction of Spontaneous Polarization and Trap Charge during Memory Operation

Reika Ichihara, Kunifumi Suzuki, Haruka Kusai et al. · 2020 · 77 citations

Engineering, Electrical Engineering, Materials Science +17

High-performance poly-Ge short-channel metal–oxide–semiconductor field-effect transistors formed on SiO₂layer by flash lamp annealing

Koji Usuda, Yoshiki Kamata, Yuuichi Kamimuta et al. · Applied Physics Express · 2014 · 75 citations

Engineering, Electrical Engineering, Materials Science +17